Low Power Parylene‐Based Memristors with a Graphene Barrier Layer for Flexible Electronics Applications-Reference-Cited by-同舟云学术

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Low Power Parylene‐Based Memristors with a Graphene Barrier Layer for Flexible Electronics Applications

Published:2019-02-13 Issue:9 Volume:5 Page:1800852
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Chen Qingyu¹²,Lin Min¹²,Wang Zongwei¹²,Zhao Xiaolong³,Cai Yimao¹²⁴^ORCID,Liu Qi³,Fang Yichen¹²,Yang Yuchao¹²⁴,He Ming¹²⁴,Huang Ru¹²⁴

Affiliation:

1. Institute of MicroelectronicsPeking University Beijing 100871 China

2. National Key Laboratory of Science and Technology on Micro/Nano Fabrication Beijing 100871 China

3. Key Laboratory of Microelectronic Device and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 China

4. Innovation Center for Microelectronics and Integrated SystemPeking University Beijing 100871 China

Funder

National Natural Science Foundation of China

Higher Education Discipline Innovation Project

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.201800852

Reference36 articles.

1. Organic Optoelectronic Materials: Mechanisms and Applications

2. Theoretical and Experimental Investigation of Graphene/High-k/p-Si Junctions

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