Electron Transport Properties in High Electron Mobility Transistor Structures Improved by V-Pit Formation on the AlGaN/GaN Interface-Reference-Cited by-同舟云学术

Electron Transport Properties in High Electron Mobility Transistor Structures Improved by V-Pit Formation on the AlGaN/GaN Interface

Published:2023-04-06 Issue:15 Volume:15 Page:19646-19652
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Hospodková Alice¹^ORCID,Hájek František¹²,Hubáček Tomáš¹,Gedeonová Zuzana¹,Hubík Pavel¹,Hývl Matěj¹^ORCID,Pangrác Jiří¹,Dominec Filip¹,Košutová Tereza¹³

Affiliation:

1. Institute of Physics CAS, v. v. i., Cukrovarnická 10, 162 00 Prague 6, Czech Republic

2. Faculty of Nuclear Sciences and Physical Engineering, Czech Technical University in Prague, Břehová 7, 11519 Prague 1, Czech Republic

3. Faculty of Mathematics and Physics, Charles University, Ke Karlovu 5, 121 16 Prague, Czech Republic

Funder

GrantovÃ¡ Agentura CeskÃ© Republiky

Ministerstvo ?kolstvÃ, MlÃ¡de?e a TelovÃ½chovy

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.3c00799

Reference26 articles.

1. GaN-Based RF Power Devices and Amplifiers

2. Recent Advances in GaN‐Based Power HEMT Devices

3. A survey of Gallium Nitride HEMT for RF and high power applications

4. Challenges for energy efficient wide band gap semiconductor power devices

5. Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors

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