Unleashing the Power of 2D MoS2: In Situ TEM Study of Its Potential as Diffusion Barriers in Ru Interconnects
Author:
Affiliation:
1. Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 300, Taiwan
Funder
Taiwan Semiconductor Manufacturing Company
National Science and Technology Council
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsami.3c10656
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4. Finite Size Effects in Highly Scaled Ruthenium Interconnects
5. Zhang, X.; Huang, H.; Patlolla, R.; Mont, F. W.; Lin, X.; Raymond, M.; Labelle, C.; Ryan, E. T.; Canaperi, D.; Standaert, T. E. In Methods to Lower the Resistivity of Ruthenium Interconnects at 7 nm Node and Beyond, IEEE International Interconnect Technology Conference (IITC); IEEE, 2017; pp 1–3.
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