Highly Conformal Amorphous W–Si–N Thin Films by Plasma-Enhanced Atomic Layer Deposition as a Diffusion Barrier for Cu Metallization
Author:
Affiliation:
1. School of Materials Science and Engineering, Yeungnam University, Gyeongsangbuk-do 712-749, Korea
2. Center for Core Research Facilities, DaeguGyeongbuk Institute of Science & Technology, Daegu, Korea
Funder
Korea Basic Science Institute
Ministry of Education, Science and Technology
Publisher
American Chemical Society (ACS)
Subject
Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/jp510226g
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1. Ultrathin Diffusion Barriers/Liners for Gigascale Copper Metallization
2. High-<tex>$kappa$</tex>/Metal–Gate Stack and Its MOSFET Characteristics
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4. Effects of B[sub 2]H[sub 6] Pretreatment on ALD of W Film Using a Sequential Supply of WF[sub 6] and SiH[sub 4]
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