Cavity Mode-Matching InGaN Aperture-Emitting Device with a Nanoporous GaN Reflector via Ion Implantation-Reference-Cited by-同舟云学术

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Cavity Mode-Matching InGaN Aperture-Emitting Device with a Nanoporous GaN Reflector via Ion Implantation

Published:2023-06-14 Issue:7 Volume:1 Page:1326-1331
ISSN:2771-9855
Container-title:ACS Applied Optical Materials
language:en
Short-container-title:ACS Appl. Opt. Mater.

Author:

Ke Ying¹,Wang Cheng-Jie¹,Hsieh Yi-Sian¹,Shiu Guo-Yi¹,Kao Yu-Cheng¹,Chen Kuei-Ting¹,Chen Hsiang²,Han Jung³^ORCID,Lin Chia-Feng¹²^ORCID

Affiliation:

1. Department of Materials Science and Engineering, National Chung Hsing University, Taichung 402, Taiwan

2. Department of Applied Materials and Optoelectronic Engineering, National Chi Nan University, Puli 54561, Taiwan

3. Department of Electrical Engineering, Yale University, 15 Prospect Street, New Haven, Connecticut 06511, United States

Funder

Ministry of Science and Technology, Taiwan

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaom.3c00152

Reference26 articles.

1. A review on the latest progress of visible GaN-based VCSELs with lateral confinement by curved dielectric DBR reflector and boron ion implantation

2. Fabrication and Characterization of InGaN-Based Green Resonant-Cavity LEDs Using Hydrogen Ion-Implantation Techniques

3. Influence of hydrogen implantation concentration on the characteristics of GaN-based resonant-cavity LEDs

4. Improving Light Output Power of the GaN-Based Vertical-Injection Light-Emitting Diodes by Mg$^{+}$ Implanted Current Blocking Layer

5. Enhanced Light Output of GaN-Based Light-Emitting Diodes With Embedded Voids Formed on Si-Implanted GaN Layers

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Vertical InGaN Light-Emitting Diode with Hybrid Distributed Bragg Reflectors;ACS Omega;2024-07-02

2. Electrochemical Etching of Nitrogen Ion‐Implanted Gallium Nitride – A Route to 3D Nanoporous Patterning;physica status solidi (b);2024-04-16

3. Sub-surface Imaging of Porous GaN Distributed Bragg Reflectors via Backscattered Electrons;Microscopy and Microanalysis;2024-04

4. Nanoporous Nitrogen-Ion-Implanted InGaN Resonant-Cavity Light-Emitting Diodes for Vertical-Cavity Surface-Emitting Lasers;ACS Applied Nano Materials;2024-03-15

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