Influence of hydrogen implantation concentration on the characteristics of GaN-based resonant-cavity LEDs-Reference-Cited by-同舟云学术

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Influence of hydrogen implantation concentration on the characteristics of GaN-based resonant-cavity LEDs

Published:2010-02-05 Issue:3 Volume:25 Page:035013
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Huang Shih-Yung,Horng Ray-Hua,Tsai Yu-Ju,Lin Po-Rung,Wang Wei-Kai,Feng Zhe Chuan,Wuu Dong-Sing

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference22 articles.

1. III-Nitride Devices and Nanoengineering

2. Light enhancement of Al nanoclusters embedded in Al-doped ZnO films of GaN-based light-emitting diodes

3. Light-extraction enhancement in GaN-based light-emitting diodes using grade-refractive-index amorphous titanium oxide films with porous structures

4. Fabrication of GaN-Based Resonant Cavity LEDs

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Cavity Mode-Matching InGaN Aperture-Emitting Device with a Nanoporous GaN Reflector via Ion Implantation;ACS Applied Optical Materials;2023-06-14

2. Enhanced Emission from InxGa1-xN-based LED Structures Using III-Nitride based Distributed Bragg Reflector;MRS Proceedings;2012

3. InGaN MQW LED structures using AlN/GaN DBR and Ag-based p-contact;MRS Proceedings;2011

4. Ohmic and Highly Reflective Ag based contacts on p-GaN for Resonant Cavity Light Emitting Diodes;MRS Proceedings;2011

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