Light-extraction enhancement in GaN-based light-emitting diodes using grade-refractive-index amorphous titanium oxide films with porous structures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3116613
Reference12 articles.
1. Nitride-Based LEDs With 800<tex>$^circhboxC$</tex>Grown p-AlInGaN–GaN Double-Cap Layers
2. Nanoepitaxy to improve the efficiency of InGaN light-emitting diodes
3. Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening
4. Enhanced light output in nitride-based light-emitting diodes by roughening the mesa sidewall
5. Light Output Enhancement of GaN-Based Roughened LEDs Using Bias-Assisted Photoelectrochemical Etching Method
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