Synthesis of Silicon-Based Infrared Semiconductors in the Ge−Sn System Using Molecular Chemistry Methods-Reference-Cited by-同舟云学术

Synthesis of Silicon-Based Infrared Semiconductors in the Ge−Sn System Using Molecular Chemistry Methods

Published:2001-10-16 Issue:44 Volume:123 Page:10980-10987
ISSN:0002-7863
Container-title:Journal of the American Chemical Society
language:en
Short-container-title:J. Am. Chem. Soc.

Author:

Taraci Jennifer¹,Zollner S.¹,McCartney M. R.¹,Menendez Jose¹,Santana-Aranda M. A.¹,Smith D. J.¹,Haaland Arne¹,Tutukin Andrey V.¹,Gundersen Grete¹,Wolf G.¹,Kouvetakis J.¹

Affiliation:

1. Contribution from the Department of Chemistry, Arizona State University, Tempe, Arizona 85287, Center for Solid State Science, Arizona State University, Tempe, Arizona 85287, Department of Physics and Astronomy, Arizona State University, Tempe, Arizona 85287, Motorola Inc., Semiconductor Products Sector, 2200 West Broadway Road, Mesa, Arizona 85202, and Department of Chemistry, University of Oslo, P.B. 1033 Blindern, N-0315 Oslo, Norway

Publisher

American Chemical Society (ACS)

Subject

Colloid and Surface Chemistry,Biochemistry,General Chemistry,Catalysis

Link

https://pubs.acs.org/doi/pdf/10.1021/ja0115058

Reference36 articles.

1. Superlattices of group IV elements, a new possibility to produce direct band gap material

2. Thermodynamic investigation on the si-ge binary system by calorimetry and knudsen cell mass spectrometry

3. Lattice Parameter and Density in Germanium-Silicon Alloys1

4. Interband Transitions inSnxGe1−xAlloys

Cited by 30 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Remote plasma-enhanced chemical vapor deposition of GeSn on Si (100), Si (111), sapphire, and fused silica substrates;Journal of Vacuum Science & Technology B;2024-08-20

2. Characterization of Germanium Nanoparticles from Arylgermanium Trihydrides;Chemistry – A European Journal;2024-07-10

3. Epitaxial twin coupled microstructure in GeSn films prepared by remote plasma enhanced chemical vapor deposition;Journal of Applied Physics;2024-04-25

4. SiGeSn Quantum Well for Photonics Integrated Circuits on Si Photonics Platform: A Review;Journal of Physics D: Applied Physics;2022-08-26

5. Improved Surface Passivation of Colloidal Ge_1-XSn_X Nanoalloys through Amorphous SiO₂ Shell Growth;J PHYS CHEM C;2022