Unconventional Growth Mechanism for Monolithic Integration of III–V on Silicon-Reference-Cited by-同舟云学术

Unconventional Growth Mechanism for Monolithic Integration of III–V on Silicon

Published:2012-12-20 Issue:1 Volume:7 Page:100-107
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Ng Kar Wei¹,Ko Wai Son¹,Tran Thai-Truong D.¹,Chen Roger¹,Nazarenko Maxim V.²,Lu Fanglu¹,Dubrovskii Vladimir G.²,Kamp Martin³,Forchel Alfred³,Chang-Hasnain Connie J.¹

Affiliation:

1. Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, Berkeley, California 94720, United States

2. St. Petersburg Academic University, Khlopina 8/3, 194021 St Petersburg, Russia

3. Technische Physik and Wilhelm Conrad Röntgen Research Center for Complex Material Systems, University of Würzburg, Am Hubland, D97074 Würzburg, Germany

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/nn3028166

Reference30 articles.

1. Electrically pumped hybrid AlGaInAs-silicon evanescent laser

2. Epitaxial lateral overgrowth of InP on Si from nano-openings: Theoretical and experimental indication for defect filtering throughout the grown layer

3. Growth mechanisms and crystallographic structure of InP nanowires on lattice-mismatched substrates

4. Core-shell InGaAs/GaAs quantum well nanoneedles grown on silicon with silicon-transparent emission

5. GaAs-Based Nanoneedle Light Emitting Diode and Avalanche Photodiode Monolithically Integrated on a Silicon Substrate

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