Epitaxial lateral overgrowth of InP on Si from nano-openings: Theoretical and experimental indication for defect filtering throughout the grown layer
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2977754
Reference14 articles.
1. Epitaxial Lateral Overgrowth of GaAs on a Si Substrate
2. Dislocation density reduction via lateral epitaxy in selectively grown GaN structures
3. Epitaxial lateral overgrowth of InP by liquid phase epitaxy
4. Proceedings of the 14th International Conference on Indium Phosphide and Related Materials;Sun Y. T.,2002
5. Proceedings of the Photonics Packaging and Integration III;Sun Y. T.,2003
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