Interface Charge Induced p-Type Characteristics of Aligned Si1−xGex Nanowires-Reference-Cited by-同舟云学术

Interface Charge Induced p-Type Characteristics of Aligned Si1−xGex Nanowires

Published:2008-10-28 Issue:11 Volume:8 Page:3656-3661
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Seong Han-Kyu¹,Jeon Eun-Kyoung¹,Kim Myoung-Ha¹,Oh Hwangyou¹,Lee Jeong-O¹,Kim Ju-Jin¹,Choi Heon-Jin¹

Affiliation:

1. Department of Materials Science and Engineering, Yonsei University, Seoul 120-749, Korea, Department of Physics, Chonbuk National University, Jeonju 561-756, Korea, and Korea Advanced Materials Division, Korea Research Institute of Chemical Technology, Daejeon, Korea

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl8016362

Reference25 articles.

1. Controlled Growth and Structures of Molecular-Scale Silicon Nanowires

2. Silicon Vertically Integrated Nanowire Field Effect Transistors

3. Room-Temperature Ferromagnetism in Cu Doped GaN Nanowires

4. Ge/Si nanowire heterostructures as high-performance field-effect transistors

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