Monte Carlo Simulations of Electron Transport Characteristics of Ternary Carbide Al4SiC4-Reference-Cited by-同舟云学术

Monte Carlo Simulations of Electron Transport Characteristics of Ternary Carbide Al4SiC4

Published:2018-12-14 Issue:1 Volume:2 Page:715-720
ISSN:2574-0962
Container-title:ACS Applied Energy Materials
language:en
Short-container-title:ACS Appl. Energy Mater.

Author:

Forster Simon¹²^ORCID,Chaussende Didier²^ORCID,Kalna Karol¹

Affiliation:

1. Nanoelectronic Devices Computational (NanoDeCo) Group, College of Engineering, Swansea University, Swansea SA1 8EN, Wales, United Kingdom

2. Université Grenoble Alpes, CNRS, Grenoble INP, SIMAP, 38000 Grenoble, France

Funder

Swansea University

Publisher

American Chemical Society (ACS)

Subject

Electrical and Electronic Engineering,Materials Chemistry,Electrochemistry,Energy Engineering and Power Technology,Chemical Engineering (miscellaneous)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaem.8b01767

Reference29 articles.

1. Atomistic deformation modes and intrinsic brittleness ofAl4SiC4: A first-principles investigation

2. Phonon optics, thermal expansion tensor, thermodynamic and chemical bonding properties of Al4SiC4 and Al4Si2C5: a first-principles study

3. Density functional calculations of the electronic structure and optical properties of the ternary carbidesAl4SiC4andAl4Si2C5

4. Al4SiC4 wurtzite crystal: Structural, optoelectronic, elastic, and piezoelectric properties

5. Synthesis and Characterization of Al₄SiC₄: A “New” Wide Band Gap Semiconductor Material

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2. Combustion synthesis of single‐phase Al 4 SiC 4 powder with assistance of induction heating;Journal of the American Ceramic Society;2019-10-21