SiC/Al4SiC4-Based Heterostructure Transistors
Author:
Affiliation:
1. Nanoelectronic Devices Computational (NanoDeCo) Group, College of Engineering, Swansea University, Swansea SA1 8EN, Wales, United Kingdom
2. Université Grenoble Alpes, CNRS, Grenoble INP, SIMAP, 38000 Grenoble, France
Publisher
American Chemical Society (ACS)
Subject
Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/acsaelm.0c00614
Reference35 articles.
1. Atomistic deformation modes and intrinsic brittleness ofAl4SiC4: A first-principles investigation
2. Phonon optics, thermal expansion tensor, thermodynamic and chemical bonding properties of Al4SiC4 and Al4Si2C5: a first-principles study
3. Density functional calculations of the electronic structure and optical properties of the ternary carbidesAl4SiC4andAl4Si2C5
4. Forster, S.; Cañas, J.; Lloret, F.; Gutiérrez, M.; Araujo, D.; Kalna, K.; Chaussende, D. Experimental Extraction of the Bandgap for Al4SiC4. Proceedings of UK Semiconductor, 2018.
5. Synthesis of Al4SiC4
Cited by 1 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Microstructures and properties of in situ lamellar Al4SiC4 bonded SiC bricks: The effect of induction heating;Journal of Alloys and Compounds;2021-07
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