Metal Al Produced by H2 Plasma Reduction of AlCl3: A Thermodynamic and Kinetic Study on the Plasma Chemistry-Reference-Cited by-同舟云学术

Metal Al Produced by H2 Plasma Reduction of AlCl3: A Thermodynamic and Kinetic Study on the Plasma Chemistry

Published:2008-09-12 Issue:40 Volume:112 Page:12748-12752
ISSN:1520-6106
Container-title:The Journal of Physical Chemistry B
language:en
Short-container-title:J. Phys. Chem. B

Author:

Zheng Jie¹,Sun Bo¹,Yang Rong¹,Song Xubo¹,Li Xingguo¹,Pu Yikang¹

Affiliation:

1. Beijing National Laboratory for Molecular Sciences (BNLMS) (The State Key Laboratory of Rare Earth Materials Chemistry and Applications), College of Chemistry and Molecular Engineering, Peking University, Beijing, P.R. China,100871, College of Engineering, Peking University, Beijing, P.R. China,100871, Department of Engineering Physics, Tsinghua University, Beijing, P.R. China, 100084

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Surfaces, Coatings and Films,Physical and Theoretical Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/jp8035204

Reference32 articles.

1. Plasma processing and chemistry

2. Plasma-assisted chemical vapor deposition of dielectric thin films for ULSI semiconductor circuits

3. An introduction to plasma etching for VLSI circuit technology

4. Hydrogenated amorphous silicon deposited at very high growth rates by an expanding Ar–H2–SiH4 plasma

5. Plasma enhanced chemical vapor deposition of amorphous, polymorphous and microcrystalline silicon films

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