Graphene Gate Electrode for MOS Structure-Based Electronic Devices-Reference-Cited by-同舟云学术

Graphene Gate Electrode for MOS Structure-Based Electronic Devices

Published:2011-11-11 Issue:12 Volume:11 Page:5383-5386
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Park Jong Kyung¹,Song Seung Min¹,Mun Jeong Hun¹,Cho Byung Jin¹

Affiliation:

1. Department of Electrical Engineering, KAIST, 335 Gwahak-ro, Yuseong-gu, Daejeon, Korea, 305-701

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl202983x

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