Single-Crystalline Hexagonal Silicon–Germanium-Reference-Cited by-同舟云学术

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Single-Crystalline Hexagonal Silicon–Germanium

Published:2016-12-27 Issue:1 Volume:17 Page:85-90
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Hauge Håkon Ikaros T.¹,Conesa-Boj Sonia¹²,Verheijen Marcel A.¹³,Koelling Sebastian¹^ORCID,Bakkers Erik P. A. M.¹²^ORCID

Affiliation:

1. Department of Applied Physics, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands

2. Kavli Institute of Nanoscience, Delft University of Technology, 2628 CJ Delft, The Netherlands

3. Philips Innovation Laboratories, High Tech Campus 11, 5656 AE Eindhoven, The Netherlands

Funder

European Research Council

Nederlandse Organisatie voor Wetenschappelijk Onderzoek

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.6b03488

Reference40 articles.

1. Light Emission from Silicon

2. Properties of hexagonal polytypes of group-IV elements from first-principles calculations

3. Electronic Properties of Complex Crystalline and Amorphous Phases of Ge and Si. I. Density of States and Band Structures

4. Electronic structure and optical properties of Si, Ge and diamond in the lonsdaleite phase

5. Hexagonal Silicon Realized

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1. Carrier cooling in direct bandgap hexagonal silicon-germanium nanowires;Applied Physics Letters;2024-09-09

2. Direct bandgap quantum wells in hexagonal Silicon Germanium;Nature Communications;2024-06-19

3. 2H–Si/Ge for Group-IV Photonics: on the Origin of Extended Defects in Core–Shell Nanowires;ACS Applied Nano Materials;2024-04-15

4. Phonon transport across GaAs/Ge heterojunctions by nonequilibrium molecular dynamics;Applied Physics Letters;2024-03-04

5. Low Surface Recombination in Hexagonal SiGe Alloy Nanowires: Implications for SiGe-Based Nanolasers;ACS Applied Nano Materials;2024-01-12

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