Versatile Fabrication of Self-Aligned Nanoscale Hall Devices Using Nanowire Masks-Reference-Cited by-同舟云学术

Versatile Fabrication of Self-Aligned Nanoscale Hall Devices Using Nanowire Masks

Published:2016-04-08 Issue:5 Volume:16 Page:3109-3115
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Tang Jianshi¹,Yu Guoqiang¹,Wang Chiu-Yen²,Chang Li-Te¹,Jiang Wanjun¹,He Congli¹,Wang Kang L.¹

Affiliation:

1. Device Research Laboratory, Department of Electrical Engineering, University of California, Los Angeles, California 90095, United States

2. Department of Materials Science and Engineering, National Taiwan University of Science and Technology, Taipei City, Taiwan 10607, Republic of China

Funder

Defense Advanced Research Projects Agency

National Science Council Taiwan

Division of Electrical, Communications and Cyber Systems

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.6b00398

Reference47 articles.

1. Nanowire Transistor Performance Limits and Applications

2. Logic Gates and Computation from Assembled Nanowire Building Blocks

3. Nanowire transistors without junctions

4. Oxide-Confined Formation of Germanium Nanowire Heterostructures for High-Performance Transistors

5. Rational Fabrication of Graphene Nanoribbons Using a Nanowire Etch Mask

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