Sub-bandgap Voltage Electroluminescence and Magneto-oscillations in a WSe2 Light-Emitting van der Waals Heterostructure-Reference-Cited by-同舟云学术

Sub-bandgap Voltage Electroluminescence and Magneto-oscillations in a WSe2 Light-Emitting van der Waals Heterostructure

Published:2017-02-27 Issue:3 Volume:17 Page:1425-1430
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Binder Johannes¹²^ORCID,Withers Freddie³⁴,Molas Maciej R.¹,Faugeras Clement¹,Nogajewski Karol¹,Watanabe Kenji⁵^ORCID,Taniguchi Takashi⁵,Kozikov Aleksey³⁴,Geim Andre K.⁴⁶,Novoselov Kostya S.³⁴,Potemski Marek¹

Affiliation:

1. Laboratoire National des Champs Magnetiques Intenses, CNRS-UGA-UPS-INSA-EMFL, 25 Rue des Martyrs, 38042 Grenoble, France

2. Faculty of Physics, University of Warsaw, Pasteura 5, 02-093 Warsaw, Poland

3. School of Physics and Astronomy, University of Manchester, Oxford Road, Manchester M13 9PL, United Kingdom

4. National Graphene Institute, University of Manchester, Oxford Road, Manchester, M13 9PL, United Kingdom

5. National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan

6. Manchester Centre for Mesoscience and Nanotechnology, University of Manchester, Oxford Road, Manchester, M13 9PL, United Kingdom

Funder

Engineering and Physical Sciences Research Council

Royal Society

Royal Academy of Engineering

European Research Council

Air Force Office of Scientific Research

Office of Naval Research

U.S. Army

Seventh Framework Programme

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.6b04374

Reference37 articles.

1. Van der Waals heterostructures

2. 2D materials and van der Waals heterostructures

3. Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures

4. Vertical field-effect transistor based on graphene–WS2 heterostructures for flexible and transparent electronics

5. Negative Differential Resistance in Boron Nitride Graphene Heterostructures: Physical Mechanisms and Size Scaling Analysis

Cited by 46 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A resilient type-III broken gap Ga2O3/SiC van der Waals heterogeneous bilayer with band-to-band tunneling effect and tunable electronic property;Scientific Reports;2024-06-03

2. Robust type-III C3N/Ga2O3 van der Waals heterostructures;Vacuum;2024-06

3. Homoepitaxy of Boron Nitride on Exfoliated Hexagonal Boron Nitride Flakes;Nano Letters;2024-05-31

4. Electroluminescent vertical tunneling junctions based on WSe ₂ monolayer quantum emitter arrays: Exploring tunability with electric and magnetic fields;Proceedings of the National Academy of Sciences;2024-05-31

5. Defects in layered boron nitride grown by Metal Organic Vapor Phase Epitaxy: luminescence and positron annihilation studies;Journal of Luminescence;2024-05