Domain Architectures and Grain Boundaries in Chemical Vapor Deposited Highly Anisotropic ReS2 Monolayer Films-Reference-Cited by-同舟云学术

Domain Architectures and Grain Boundaries in Chemical Vapor Deposited Highly Anisotropic ReS2 Monolayer Films

Published:2016-08-08 Issue:9 Volume:16 Page:5888-5894
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Wu Kedi¹,Chen Bin¹,Yang Sijie¹,Wang Gang²,Kong Wilson¹,Cai Hui¹,Aoki Toshihiro³,Soignard Emmanuel³,Marie Xavier²,Yano Aliya¹,Suslu Aslihan¹,Urbaszek Bernhard²,Tongay Sefaattin¹

Affiliation:

1. School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, Arizona 85287, United States

2. Universit́e de Toulouse, INSA-CNRS-UPS, LPCNO, 135 Av. Rangueil, 31077 Toulouse, France

3. LeRoy Eyring Center for Solid State Science, Arizona State University, Tempe, Arizona 85287, United States

Funder

Agence Nationale de la Recherche

European Research Council

Division of Civil, Mechanical and Manufacturing Innovation

Division of Materials Research

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.6b02766

Reference19 articles.

1. Monolayer behaviour in bulk ReS2 due to electronic and vibrational decoupling

2. In-Plane Anisotropy in Mono- and Few-Layer ReS2 Probed by Raman Spectroscopy and Scanning Transmission Electron Microscopy

3. Rhenium Dichalcogenides: Layered Semiconductors with Two Vertical Orientations

4. Coupling and Stacking Order of ReS2 Atomic Layers Revealed by Ultralow-Frequency Raman Spectroscopy

5. ReS2-Based Field-Effect Transistors and Photodetectors

Cited by 89 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Gate modulation of barrier height of unipolar vertically stacked monolayer ReS2/MoS2 heterojunction;Scientific Reports;2024-09-13

2. Two-dimensional rhenium disulfide: Synthesis and application in electrocatalytic water splitting;International Journal of Hydrogen Energy;2024-09

3. Gate Modulation of Barrier Height of Unipolar Vertically Stacked Monolayer ReS2 / MoS2 Heterojunction.;2024-08-14

4. Low‐temperature chemical vapor deposition growth of 2D materials;Electron;2024-06-12

5. Emergence of two distinct phase transitions in monolayer CoSe2 on graphene;Nano Convergence;2024-05-24