ReS2-Based Field-Effect Transistors and Photodetectors-Reference-Cited by-同舟云学术

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ReS2-Based Field-Effect Transistors and Photodetectors

Published:2015-05-22 Issue:26 Volume:25 Page:4076-4082
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Zhang Enze¹²,Jin Yibo¹²,Yuan Xiang¹²,Wang Weiyi¹²,Zhang Cheng¹²,Tang Lei¹²,Liu Shanshan¹²,Zhou Peng³,Hu Weida⁴,Xiu Faxian¹²

Affiliation:

1. State Key Laboratory of Surface Physics and Department of Physics; Fudan University; Shanghai 200433 China

2. Collaborative Innovation Center of Advanced Microstructures; Fudan University; Shanghai 200433 China

3. State Key Laboratory of ASIC and System; Department of Microelectronics; Fudan University; Shanghai 200433 China

4. National Laboratory for Infrared Physics; Shanghai Institute of Technical Physics; Chinese Academy of Sciences; Shanghai 200083 China

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Reference43 articles.

1. The valley Hall effect in MoS 2 transistors

2. Electrically Switchable Chiral Light-Emitting Transistor

3. Graphene–MoS2 hybrid structures for multifunctional photoresponsive memory devices

4. Mobility Improvement and Temperature Dependence in MoSe2 Field-Effect Transistors on Parylene-C Substrate

5. Highly efficient gate-tunable photocurrent generation in vertical heterostructures of layered materials

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