Mobility Improvement and Temperature Dependence in MoSe2 Field-Effect Transistors on Parylene-C Substrate-Reference-Cited by-同舟云学术

Mobility Improvement and Temperature Dependence in MoSe2 Field-Effect Transistors on Parylene-C Substrate

Published:2014-04-16 Issue:5 Volume:8 Page:5079-5088
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Chamlagain Bhim¹,Li Qing²,Ghimire Nirmal Jeevi³⁴,Chuang Hsun-Jen¹,Perera Meeghage Madusanka¹,Tu Honggen⁵,Xu Yong⁵,Pan Minghu²,Xaio Di⁶,Yan Jiaqiang³⁴,Mandrus David³⁴,Zhou Zhixian¹

Affiliation:

1. Department of Physics and Astronomy, Wayne State University, Detroit, Michigan 48201, United States

2. Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States

3. Department of Materials Science and Engineering, The University of Tennessee, Knoxville, Tennessee 37996, United States

4. Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States

5. Department of Electrical and Computer Engineering, Wayne State University, Detroit, Michigan 48202, United States

6. Department of Physics, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213, United States

Funder

National Science Foundation

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/nn501150r

Reference40 articles.

1. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

2. Progress, Challenges, and Opportunities in Two-Dimensional Materials Beyond Graphene

3. Two-dimensional atomic crystals

4. Electric Field Effect in Atomically Thin Carbon Films

5. Single-layer MoS2 transistors

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