Eighty-Eight Percent Directional Guiding of Spin Currents with 90 μm Relaxation Length in Bilayer Graphene Using Carrier Drift-Reference-Cited by-同舟云学术

Eighty-Eight Percent Directional Guiding of Spin Currents with 90 μm Relaxation Length in Bilayer Graphene Using Carrier Drift

Published:2016-07-15 Issue:8 Volume:16 Page:4825-4830
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Ingla-Aynés Josep¹,Meijerink Rick J.¹,Wees Bart J. van¹

Affiliation:

1. Physics of Nanodevices, Faculty of Mathematics and Natural Sciences, Zernike Institute for Advanced Materials, University of Groningen, Groningen 9747 AG, The Netherlands

Funder

Research Executive Agency

Seventh Framework Programme

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.6b01004

Reference29 articles.

1. Spintronics: Fundamentals and applications

2. Spin diffusion and injection in semiconductor structures: Electric field effects

3. Nonlinear interaction of spin and charge currents in graphene

4. Electronic measurement and control of spin transport in silicon

5. Spin drift in highly doped n-type Si

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