Contact Engineering High-Performance n-Type MoTe2 Transistors-Reference-Cited by-同舟云学术

Contact Engineering High-Performance n-Type MoTe2 Transistors

Published:2019-07-17 Issue:9 Volume:19 Page:6352-6362
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Mleczko Michal J.¹,Yu Andrew C.¹,Smyth Christopher M.²,Chen Victoria¹,Shin Yong Cheol¹,Chatterjee Sukti³,Tsai Yi-Chia¹⁴,Nishi Yoshio¹,Wallace Robert M.²^ORCID,Pop Eric¹⁵^ORCID

Affiliation:

1. Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States

2. Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75083, United States

3. Applied Materials, Inc., Santa Clara, California 95054, United States

4. Department of Electrical and Computer Engineering, National Chiao Tung University, Hsinchu 300, Taiwan

5. Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, United States

Funder

U.S. Department of Defense

National Science Foundation

U.S. Department of Commerce

Semiconductor Research Corporation

Stanford University

Government of Canada

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.9b02497

Reference74 articles.

1. Electronics based on two-dimensional materials

2. Nanomaterials in transistors: From high-performance to thin-film applications

3. High-Performance WSe2 Complementary Metal Oxide Semiconductor Technology and Integrated Circuits

4. High-Gain Inverters Based on WSe2 Complementary Field-Effect Transistors

5. Electronic structure and crystallography of MoTe2and WTe2

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