High-Performance WSe2 Complementary Metal Oxide Semiconductor Technology and Integrated Circuits-Reference-Cited by-同舟云学术

High-Performance WSe2 Complementary Metal Oxide Semiconductor Technology and Integrated Circuits

Published:2015-07-28 Issue:8 Volume:15 Page:4928-4934
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Yu Lili¹,Zubair Ahmad¹,Santos Elton J. G.²,Zhang Xu¹,Lin Yuxuan¹,Zhang Yuhao¹,Palacios Tomás¹

Affiliation:

1. Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, United States

2. Department of Chemical Engineering, Stanford University, Stanford, California 94305, United States

Funder

Office of Naval Research

Division of Materials Research

U.S. Army Research Laboratory

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.5b00668

Reference32 articles.

1. Single-layer MoS2 transistors

2. Electronics based on two-dimensional materials

3. Science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems

4. Integrated Circuits Based on Bilayer MoS2 Transistors

5. Graphene Electronics for RF Applications

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