Trifluoromethylation of 2D Transition Metal Dichalcogenides: A Mild Functionalization and Tunable p‐Type Doping Method

Author:

Kerwin Brendan1,Liu Stephanie E.2,Sadhukhan Tumpa13,Dasgupta Anushka2,Jones Leighton O.1,López‐Arteaga Rafael2,Zeng Thomas T.2,Facchetti Antonio14ORCID,Schatz George C.1,Hersam Mark C.125,Marks Tobin J.12ORCID

Affiliation:

1. Department of Chemistry and the Materials Research Center Northwestern University 2145 Sheridan Road Evanston IL-60208-3113 USA

2. Department of Materials Science and Engineering and the Materials Research Center Northwestern University 2220 Campus Drive Evanston IL-60208-3108 USA

3. Department of Chemistry SRM Institute of Science and Technology Kattankulathur Tamil Nadu 603203 India

4. School of Materials Science and Engineering Georgia Institute of Technology Atlanta Georgia 30332 United States

5. Department of Electrical and Computer Engineering Northwestern University 2145 Sheridan Road Evanston IL-60208-3113 USA

Abstract

AbstractChemical modification is a powerful strategy for tuning the electronic properties of 2D semiconductors. Here we report the electrophilic trifluoromethylation of 2D WSe2 and MoS2 under mild conditions using the reagent trifluoromethyl thianthrenium triflate (TTT). Chemical characterization and density functional theory calculations reveal that the trifluoromethyl groups bind covalently to surface chalcogen atoms as well as oxygen substitution sites. Trifluoromethylation induces p‐type doping in the underlying 2D material, enabling the modulation of charge transport and optical emission properties in WSe2. This work introduces a versatile and efficient method for tailoring the optical and electronic properties of 2D transition metal dichalcogenides.

Funder

National Science Foundation

National Institute of Standards and Technology

Basic Energy Sciences

Publisher

Wiley

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