Photoindentation: A New Route to Understanding Dislocation Behavior in Light-Reference-Cited by-同舟云学术

Photoindentation: A New Route to Understanding Dislocation Behavior in Light

Published:2021-02-17 Issue:5 Volume:21 Page:1962-1967
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Nakamura Atsutomo¹²^ORCID,Fang Xufei³^ORCID,Matsubara Ayaka¹,Tochigi Eita²⁴^ORCID,Oshima Yu¹,Saito Tatsushi¹,Yokoi Tatsuya¹,Ikuhara Yuichi⁴⁵^ORCID,Matsunaga Katsuyuki¹⁵^ORCID

Affiliation:

1. Department of Materials Physics, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan

2. PRESTO, Japan Science and Technology Agency (JST), 7, Gobancho, Chiyoda-ku, Tokyo 102-0076, Japan

3. Department of Materials and Earth Sciences, Technical University of Darmstadt, 64287 Darmstadt, Germany

4. Institute of Engineering Innovation, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656, Japan

5. Nanostructures Research Laboratory, Japan Fine Ceramics Center, 2-4-1, Mutsuno, Atsuta-ku, Nagoya 456-8587, Japan

Funder

Technische Universit?t Darmstadt

Ministry of Education, Culture, Sports, Science and Technology

Core Research for Evolutional Science and Technology

Precursory Research for Embryonic Science and Technology

Japan Society for the Promotion of Science

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.0c04337

Reference31 articles.

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2. Dopants and Defects in Semiconductors

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5. The photoplastic effect in wurtzite and sphalerite structure II–VI compounds

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