Bringing the photoplastic effect in ZnO to light: A photoindentation study on pyramidal slip-Reference-Cited by-同舟云学术

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Bringing the photoplastic effect in ZnO to light: A photoindentation study on pyramidal slip

Published:2024-02 Issue:2 Volume:44 Page:1301-1305
ISSN:0955-2219
Container-title:Journal of the European Ceramic Society
language:en
Short-container-title:Journal of the European Ceramic Society

Author:

Oguri Hiroto,Li Yan^ORCID,Tochigi Eita,Fang Xufei,Tanigaki Kenichi,Ogura Yu,Matsunaga Katsuyuki,Nakamura Atsutomo

Publisher

Elsevier BV

Subject

Materials Chemistry,Ceramics and Composites

Reference37 articles.

1. Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices;Roccaforte;Microelectron. Eng.,2018

2. A comprehensive review of ZnO materials and devices;Özgür;J. Appl. Phys.,2005

3. GaN metal-oxide-semiconductor high-electron-mobility-transistor with atomic layer deposited Al2O3 as gate dielectric;Ye;Appl. Phys. Lett.,2005

4. Material science and device physics in SiC technology for high-voltage power devices;Kimoto;Jpn. J. Appl. Phys.,2015

5. Semiconductor Opto-Electronics;Moss,2013

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1. Alterable fracture toughness of amorphous silica by injection and removal of electrostatic charge;Scripta Materialia;2025-01

2. Atomic-structure changes of 30∘ partial-dislocation cores due to excess carriers in GaP;Physical Review Materials;2024-09-12

3. Experimental Guides for Metallic Materials：2. Measurement and Evaluation of Material Properties: 2-1 Mechanical Properties：2-1-6 Nanoindentation Test;Materia Japan;2024-02-01

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