Purcell Enhancement of a Single Silicon Carbide Color Center with Coherent Spin Control-Reference-Cited by-同舟云学术

Purcell Enhancement of a Single Silicon Carbide Color Center with Coherent Spin Control

Published:2020-03-25 Issue:5 Volume:20 Page:3427-3434
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Crook Alexander L.¹²,Anderson Christopher P.¹²,Miao Kevin C.¹,Bourassa Alexandre¹,Lee Hope¹²,Bayliss Sam L.¹^ORCID,Bracher David O.³⁴,Zhang Xingyu³,Abe Hiroshi⁵,Ohshima Takeshi⁵^ORCID,Hu Evelyn L.³⁴,Awschalom David D.¹²⁶^ORCID

Affiliation:

1. Pritzker School of Molecular Engineering, University of Chicago, Chicago, Illinois 60637, United States

2. Department of Physics, University of Chicago, Chicago, Illinois 60637, United States

3. John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, United States

4. Department of Physics, Harvard University, Cambridge, Massachusetts 02138, United States

5. National Institutes for Quantum and Radiological Science and Technology, 1233 Watanuki, Takasaki, Gunma 370-1292, Japan

6. Center for Molecular Engineering and Materials Science Division, Argonne National Laboratory, Lemont, Illinois 60439, United States

Funder

Directorate for Engineering

Basic Energy Sciences

Japan Society for the Promotion of Science

Division of Materials Research

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.0c00339

Reference56 articles.

1. Silicon Carbide Converters and MEMS Devices for High-temperature Power Electronics: A Critical Review

2. Micro‐ and nanomechanical structures for silicon carbide MEMS and NEMS

3. Room temperature coherent control of defect spin qubits in silicon carbide

4. Isolated electron spins in silicon carbide with millisecond coherence times

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