Two-Dimensional Unipolar Memristors with Logic and Memory Functions-Reference-Cited by-同舟云学术

Two-Dimensional Unipolar Memristors with Logic and Memory Functions

Published:2020-05-05 Issue:6 Volume:20 Page:4144-4152
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Yin Lei¹²,Cheng Ruiqing¹²^ORCID,Wang Zhenxing¹²,Wang Feng¹,Sendeku Marshet Getaye¹²,Wen Yao³,Zhan Xueying¹,He Jun¹²³^ORCID

Affiliation:

1. CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing 100190, China

2. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Science, Beijing 100049, China

3. School of Physics and Technology, Wuhan University, Wuhan 430072, China

Funder

Ministry of Science and Technology of the People's Republic of China

Youth Innovation Promotion Association of the Chinese Academy of Sciences

National Natural Science Foundation of China

Chinese Academy of Sciences

CAS Key Laboratory of Nanosystem and Hierarchical Fabrication

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.0c00002

Reference39 articles.

1. In-memory computing with resistive switching devices

2. ‘Memristive’ switches enable ‘stateful’ logic operations via material implication

3. Memristive devices for computing

4. Multi-terminal memtransistors from polycrystalline monolayer molybdenum disulfide

5. Non-volatile resistive memory devices based on solution-processed ultrathin two-dimensional nanomaterials

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