Observation of Uncompensated Bound Charges at Improper Ferroelectric Domain Walls-Reference-Cited by-同舟云学术

Observation of Uncompensated Bound Charges at Improper Ferroelectric Domain Walls

Published:2019-02-12 Issue:3 Volume:19 Page:1659-1664
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Schoenherr Peggy¹^ORCID,Shapovalov Konstantin²³,Schaab Jakob¹,Yan Zewu⁴⁵,Bourret Edith D.⁵,Hentschel Mario⁶,Stengel Massimiliano³⁷,Fiebig Manfred¹,Cano Andrés⁸,Meier Dennis¹⁹^ORCID

Affiliation:

1. Department of Materials, ETH Zurich, Vladimir-Prelog-Weg 4, 8093 Zurich, Switzerland

2. CNRS, Université de Bordeaux, ICMCB, UPR 9048, 33600 Pessac, France

3. Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, 08193 Bellaterra, Spain

4. Department of Physics, ETH Zurich, Otto-Stern-Weg 1, 8093 Zurich, Switzerland

5. Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States

6. 4th Physics Institute and Research Center SCoPE, University of Stuttgart, Pfaffenwaldring 57, 70569 Stuttgart, Germany

7. ICREA−Institució Catalana de Recerca i Estudis Avançats, 08010 Barcelona, Spain

8. Institut Néel, CNRS & Univ. Grenoble Alpes, 38042 Grenoble, France

9. Department of Materials Science and Engineering, Norwegian University of Science and Technology, NTNU, 7043 Trondheim, Norway

Funder

Baden-Württemberg Stiftung

Bundesministerium für Bildung und Forschung

Deutsche Forschungsgemeinschaft

Basic Energy Sciences

Norges Teknisk-Naturvitenskapelige Universitet

H2020 European Research Council

Schweizerischer Nationalfonds zur Förderung der Wissenschaftlichen Forschung

Université de Bordeaux

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.8b04608

Reference37 articles.

1. Emergent phenomena at oxide interfaces

2. Static conductivity of charged domain walls in uniaxial ferroelectric semiconductors

3. Anisotropic conductance at improper ferroelectric domain walls

4. Free-electron gas at charged domain walls in insulating BaTiO3

5. Formation of charged ferroelectric domain walls with controlled periodicity

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