Affiliation:
1. Department of Materials Science and Engineering Norwegian University of Science and Technology (NTNU) Trondheim 7034 Norway
2. Experimental Physics V Center for Electronic Correlation and Magnetism Universität Augsburg 86159 Augsburg Germany
3. Department of Physics ETH Zurich Zurich 8093 Switzerland
4. Materials Sciences Division Lawrence Berkeley National Laboratory Berkeley CA 94720 USA
5. Catalan Institute of Nanoscience and Nanotechnology (ICN2) Campus Universitat Autonoma de Barcelona Bellaterra Catalonia 08193 Spain
6. ICREA‐Institucio Catalana de Recerca i Estudis Avançats Barcelona Catalonia 08010 Spain
Abstract
AbstractExtraordinary physical properties arise at polar interfaces in oxide materials, including the emergence of 2D electron gases, sheet‐superconductivity, and multiferroicity. A special type of polar interface is ferroelectric domain walls, where electronic reconstruction phenomena can be driven by bound charges. Great progress has been achieved in the characterization of such domain walls and, over the last decade, their potential for next‐generation nanotechnology has become clear. Established tomography techniques, however, are either destructive or offer insufficient spatial resolution, creating a pressing demand for 3D imaging compatible with future fabrication processes. Here, non‐destructive tomographic imaging of ferroelectric domain walls is demonstrated using secondary electrons. Utilizing conventional scanning electron microscopy (SEM), the position, orientation, and charge state of hidden domain walls are reconstructed at distances up to several hundreds of nanometers away from the surface. A mathematical model is derived that links the SEM intensity variations at the surface to the local domain wall properties, enabling non‐destructive tomography with good noise tolerance on the timescale of seconds. The SEM‐based approach facilitates high‐throughput screening of materials with functional domain walls and domain‐wall‐based devices, which is essential for monitoring during the production of device architectures and quality control in real‐time.
Funder
Norges Forskningsråd
Ministerio de Educación y Formación Profesional
Studienstiftung des Deutschen Volkes
HORIZON EUROPE European Research Council
Cited by
1 articles.
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