The Dielectric Impact of Layer Distances on Exciton and Trion Binding Energies in van der Waals Heterostructures-Reference-Cited by-同舟云学术

The Dielectric Impact of Layer Distances on Exciton and Trion Binding Energies in van der Waals Heterostructures

Published:2018-03-20 Issue:4 Volume:18 Page:2725-2732
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Florian Matthias¹,Hartmann Malte¹,Steinhoff Alexander¹,Klein Julian²³^ORCID,Holleitner Alexander W.²³^ORCID,Finley Jonathan J.²³,Wehling Tim O.¹⁴,Kaniber Michael²³,Gies Christopher¹

Affiliation:

1. Institut für Theoretische Physik, Universität Bremen, P.O. Box 330 440, 28334 Bremen, Germany

2. Walter Schottky Institut and Physik Department, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany

3. Nanosystems Initiative Munich (NIM), Schellingstrasse 4, 80799 München, Germany

4. Bremen Center for Computational Materials Science, Universität Bremen, 28334 Bremen, Germany

Funder

Elitenetzwerk Bayern

Deutsche Forschungsgemeinschaft

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.8b00840

Reference56 articles.

1. Van der Waals heterostructures

2. How dielectric screening in two-dimensional crystals affects the convergence of excited-state calculations: Monolayer MoS2

3. Optical Spectrum ofMoS2: Many-Body Effects and Diversity of Exciton States

4. Calculating excitons, plasmons, and quasiparticles in 2D materials and van der Waals heterostructures

5. Model dielectric function for 2D semiconductors including substrate screening

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