Affiliation:
1. Department of Physics and Astronomy University of Georgia Athens GA 30602 USA
2. KBR Beavercreek OH 45433 USA
3. Air Force Research Laboratory Sensors Directorate Wright Patterson Air Force Base Dayton OH 45433 USA
Abstract
AbstractViolet phosphorus (VP) is garnering attention for its appealing physical properties and potential applications in optoelectronics. A comprehensive investigation of the photodegradation and thermal effects of exfoliated VP on SiO2/Si substrates is presented. The degradation rate of VP is strongly influenced by the wavelength and exposure duration of light. Light illumination of VP above the bandgap leads to faster degradation, attributed to interactions with reactive oxygen species. Power‐dependent photoluminescence (PL) measurements at low temperature (T = 4 K) show neutral exciton (X0) and trion (T) intensities linearly increase with excitation power, while the energy difference between peak energies decreases. The T/X0 spectral weight ratio increases from 0.28 at 300 K to 0.69 at 4 K, suggesting enhanced T formation due to reduced phonon scattering. Temperature‐dependent Raman is used to investigate the phonon properties of VP. Tracking peak positions of 9 Raman modes with temperature, the linear first‐order temperature coefficient is obtained and found to be linear for all modes. The results provide a deeper understanding of VP's degradation behavior and implications for optoelectronic applications.
Funder
Air Force Office of Scientific Research
National Science Foundation
Cited by
4 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献