Three-Dimensional Graphene Field-Effect Transistors as High-Performance Photodetectors-Reference-Cited by-同舟云学术

Three-Dimensional Graphene Field-Effect Transistors as High-Performance Photodetectors

Published:2019-01-30 Issue:3 Volume:19 Page:1494-1503
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Deng Tao¹^ORCID,Zhang Zhaohao²,Liu Yaxuan¹,Wang Yingxin^ORCID,Su Fang¹,Li Shasha¹,Zhang Yang¹,Li Hao,Chen Houjin¹,Zhao Ziran,Li Yue,Liu Zewen

Affiliation:

1. School of Electronic and Information Engineering, Beijing Jiaotong University, Beijing 100044, China

2. Key Laboratory of Microelectronics Devices & Integrated Technology, IC Advanced Process R&D Center, Institute of Microelectronics of Chinese Academy of Sciences (IMECAS), Beijing 100029, China

Funder

Ministry of Education of the People's Republic of China

Natural Science Foundation of Beijing Municipality

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

http://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.8b04099

Reference57 articles.

1. Graphene photonics and optoelectronics

2. Photodetectors based on graphene, other two-dimensional materials and hybrid systems

3. Ultrafast graphene photodetector

4. Graphene photodetectors for high-speed optical communications

5. Raman and Photocurrent Imaging of Electrical Stress-Induced p–n Junctions in Graphene

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