Double-Spiral Hexagonal Boron Nitride and Shear Strained Coalescence Boundary-Reference-Cited by-同舟云学术

Double-Spiral Hexagonal Boron Nitride and Shear Strained Coalescence Boundary

Published:2019-03-07 Issue:7 Volume:19 Page:4229-4236
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Park Hyo Ju¹²^ORCID,Tay Roland Yingjie³⁴,Wang Xiao²^ORCID,Zhao Wen²^ORCID,Kim Jung Hwa¹^ORCID,Ruoff Rodney S.¹²⁵,Ding Feng¹²^ORCID,Teo Edwin Hang Tong³⁶,Lee Zonghoon¹²^ORCID

Affiliation:

1. School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea

2. Center for Multidimensional Carbon Materials, Institute for Basic Science (IBS), Ulsan 44919, Republic of Korea

3. School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore

4. Temasek Laboratories@NTU, 50 Nanyang Avenue, Singapore 639798, Singapore

5. Department of Chemistry, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea

6. School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore

Funder

Agence Nationale de la Recherche

National Research Foundation of Korea

National Research Foundation Singapore

Institute for Basic Science

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.8b05034

Reference60 articles.

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5. Air-Stable Transport in Graphene-Contacted, Fully Encapsulated Ultrathin Black Phosphorus-Based Field-Effect Transistors

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