Epitaxial Growth and Band Structure of Te Film on Graphene-Reference-Cited by-同舟云学术

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Epitaxial Growth and Band Structure of Te Film on Graphene

Published:2017-07-03 Issue:8 Volume:17 Page:4619-4623
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Huang Xiaochun¹²,Guan Jiaqi¹²,Lin Zijian¹,Liu Bing¹²,Xing Shuya¹,Wang Weihua¹^ORCID,Guo Jiandong¹²³^ORCID

Affiliation:

1. Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China

2. School of Physical Sciences, University of the Chinese Academy of Sciences, Beijing 100190, China

3. Collaborative Innovation Center of Quantum Matter, Beijing 100871, China

Funder

Ministry of Science and Technology of the People's Republic of China

National Natural Science Foundation of China

Chinese Academy of Sciences

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.7b01029

Reference45 articles.

1. Two-dimensional gas of massless Dirac fermions in graphene

2. The rise of graphene

3. The electronic properties of graphene

4. Silicene: Compelling Experimental Evidence for Graphenelike Two-Dimensional Silicon

5. Evidence of Silicene in Honeycomb Structures of Silicon on Ag(111)

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