Direct Observations of Spontaneous In‐Plane Electronic Polarization in 2D Te Films

Author:

Zhang Zhi‐Hao1,Yang Lian‐Zhi1,Qin Hao‐Jun1,Liao Wen‐Ao1,Liu Heng234,Fu Jun234,Zeng Hualing234,Zhang Wenhao15ORCID,Fu Ying‐Shuang15

Affiliation:

1. School of Physics and Wuhan National High Magnetic Field Center Huazhong University of Science and Technology Wuhan 430074 China

2. International Center for Quantum Design of Functional Materials (ICQD) Hefei National Research Center for Physical Sciences at the Microscale University of Science and Technology of China Hefei 230026 China

3. CAS Key Laboratory of Strongly Coupled Quantum Matter Physics Department of Physics University of Science and Technology of China Hefei Anhui 230026 China

4. Hefei National Laboratory University of Science and Technology of China Hefei 230088 China

5. Institute for Quantum Science and Engineering Huazhong University of Science and Technology Wuhan 430074 China

Abstract

AbstractSingle‐element polarization in low dimensions is fascinating for constructing next‐generation nanoelectronics with multiple functionalities, yet remains difficult to access with satisfactory performance. Here, spectroscopic evidences are presented for the spontaneous electronic polarization in tellurium (Te) films thinned down to bilayer, characterized by low‐temperature scanning tunneling microscopy/spectroscopy. The unique chiral structure and centrosymmetry‐breaking character in 2D Te gives rise to sizable in‐plane polarization with accumulated charges, which is demonstrated by the reversed band‐bending trends at opposite polarization edges in spatially resolved spectra and conductance mappings. The polarity of charges exhibits intriguing influence on imaging the moiré superlattice at the Te‐graphene interface. Moreover, the plain spontaneous polarization robustly exists for various film thicknesses, and can universally preserve against different epitaxial substrates. The experimental validations of considerable electronic polarization in Te multilayers thus provide a realistic platform for promisingly facilitating reliable applications in microelectronic devices.

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Natural Science Foundation of Hubei Province

Publisher

Wiley

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