Defect-Tolerant Monolayer Transition Metal Dichalcogenides-Reference-Cited by-同舟云学术

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Defect-Tolerant Monolayer Transition Metal Dichalcogenides

Published:2016-04-01 Issue:4 Volume:16 Page:2234-2239
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Pandey Mohnish¹,Rasmussen Filip A.¹,Kuhar Korina¹,Olsen Thomas¹,Jacobsen Karsten W.¹,Thygesen Kristian S.¹²

Affiliation:

1. Center for Atomic-Scale Materials Design (CAMD), Department of Physics, Technical University of Denmark, DK-2800 Kongens Lyngby, Denmark

2. Center for Nanostructured Graphene (CNG), Department of Physics, Technical University of Denmark, DK-2800 Kongens Lyngby, Denmark

Funder

Det Frie Forskningsråd

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.5b04513

Reference48 articles.

1. Atomically ThinMoS2: A New Direct-Gap Semiconductor

2. Emerging Photoluminescence in Monolayer MoS2

3. Optical signature of symmetry variations and spin-valley coupling in atomically thin tungsten dichalcogenides

4. Direct Imaging of Band Profile in Single Layer MoS2 on Graphite: Quasiparticle Energy Gap, Metallic Edge States, and Edge Band Bending

5. Valley-selective circular dichroism of monolayer molybdenum disulphide

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2. Tip-induced creation and Jahn-Teller distortions of sulfur vacancies in single-layer MoS2;Physical Review B;2024-05-24

3. A striking exploration of defect engineering in HfS2, HfSe2, and janus HfSSe through ab initio analysis for HER catalysis application;International Journal of Hydrogen Energy;2024-05

4. Native point defects in 2D transition metal dichalcogenides: A perspective bridging intrinsic physical properties and device applications;Journal of Applied Physics;2024-03-08

5. Point-like vacancies in two-dimensional transition metal dichalcogenides;Electronic Structure;2024-02-08

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