Direct Imaging of Band Profile in Single Layer MoS2 on Graphite: Quasiparticle Energy Gap, Metallic Edge States, and Edge Band Bending
Author:
Affiliation:
1. Department of Physics, University of Texas at Austin, Austin, Texas 78712, United States
2. Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei, 10617, Taiwan
Funder
NSF Office of the Director
Welch Foundation
National Science Council Taiwan
Publisher
American Chemical Society (ACS)
Subject
Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering
Link
https://pubs.acs.org/doi/pdf/10.1021/nl501133c
Reference24 articles.
1. Single-layer MoS2 transistors
2. Emerging Photoluminescence in Monolayer MoS2
3. Atomically ThinMoS2: A New Direct-Gap Semiconductor
4. Electrical tuning of valley magnetic moment through symmetry control in bilayer MoS2
5. Coupled Spin and Valley Physics in Monolayers ofMoS2and Other Group-VI Dichalcogenides
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