Electrical tuning of valley magnetic moment through symmetry control in bilayer MoS2-Reference-Cited by-同舟云学术

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Electrical tuning of valley magnetic moment through symmetry control in bilayer MoS2

Published:2013-01-27 Issue:3 Volume:9 Page:149-153
ISSN:1745-2473
Container-title:Nature Physics
language:en
Short-container-title:Nature Phys

Author:

Wu Sanfeng,Ross Jason S.,Liu Gui-Bin,Aivazian Grant,Jones Aaron,Fei Zaiyao,Zhu Wenguang,Xiao Di,Yao Wang,Cobden David,Xu Xiaodong

Publisher

Springer Science and Business Media LLC

Subject

General Physics and Astronomy

Link

http://www.nature.com/articles/nphys2524.pdf

Reference29 articles.

1. Xiao, D., Chang, M-C. & Niu, Q. Berry phase effects on electronic properties. Rev. Mod. Phys. 82, 1959–2007 (2010).

2. Mak, K. F., Lui, C. H., Shan, J. & Heinz, T. F. Observation of an electric-field-induced band gap in bilayer graphene by infrared spectroscopy. Phys. Rev. Lett. 102, 256405 (2009).

3. Zhang, Y. et al. Direct observation of a widely tunable bandgap in bilayer graphene. Nature 459, 820–823 (2009).

4. Xiao, D., Yao, W. & Niu, Q. Valley-contrasting physics in graphene: Magnetic moment and topological transport. Phys. Rev. Lett. 99, 236809 (2007).

5. Yao, W., Xiao, D. & Niu, Q. Valley-dependent optoelectronics from inversion symmetry breaking. Phys. Rev. B 77, 235406 (2008).

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