Bent Ferroelectric Domain Walls as Reconfigurable Metallic-Like Channels-Reference-Cited by-同舟云学术

Bent Ferroelectric Domain Walls as Reconfigurable Metallic-Like Channels

Published:2015-11-24 Issue:12 Volume:15 Page:8049-8055
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Stolichnov Igor¹,Feigl Ludwig¹,McGilly Leo J.¹,Sluka Tomas¹²,Wei Xian-Kui¹³,Colla Enrico¹,Crassous Arnaud¹,Shapovalov Konstantin¹,Yudin Petr¹,Tagantsev Alexander K.¹,Setter Nava¹

Affiliation:

1. Ceramics Laboratory, EPFL-Swiss Federal Institute of Technology, Lausanne 1015, Switzerland

2. DPMC-MaNEP, University of Geneva, 24 Quai Ernest Ansermet, 1211 Geneva 4, Switzerland

3. Peter Grunberg Institute and Ernst Ruska Center for Microscopy and Spectroscopy with Electrons, Research Center Jülich, Jülich 52425, Germany

Funder

Direktion für Entwicklung und Zusammenarbeit

European Research Council

Schweizerische Nationalfonds zur Förderung der Wissenschaftlichen Forschung

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.5b03450

Reference25 articles.

1. Conduction at domain walls in oxide multiferroics

2. Dynamic Conductivity of Ferroelectric Domain Walls in BiFeO3

3. Domain Wall Conductivity in La-DopedBiFeO3

4. Conduction at Domain Walls in Insulating Pb(Zr0.2Ti0.8)O3 Thin Films

5. Conduction through 71° Domain Walls inBiFeO3Thin Films

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