Toward the reproducible fabrication of conductive ferroelectric domain walls into lithium niobate bulk single crystals

Author:

Ratzenberger Julius12ORCID,Kiseleva Iuliia1ORCID,Koppitz Boris1ORCID,Beyreuther Elke1ORCID,Zahn Manuel13ORCID,Gössel Joshua1ORCID,Hegarty Peter A.1ORCID,Amber Zeeshan H.1ORCID,Rüsing Michael4ORCID,Eng Lukas M.12ORCID

Affiliation:

1. Institut für Angewandte Physik, Technische Universität Dresden 1 , 01062 Dresden, Germany

2. ct.qmat: Dresden-Würzburg Cluster of Excellence—EXC 2147, Technische Universität Dresden 2 , 01062 Dresden, Germany

3. Center for Electronic Correlations and Magnetism, University of Augsburg 3 , 86159 Augsburg, Germany

4. Institute for Photonic Quantum Systems, Paderborn University 4 , 33098 Paderborn, Germany

Abstract

Ferroelectric domain walls (DWs) are promising structures for assembling future nano-electronic circuit elements on a larger scale since reporting domain wall currents of up to 1 mA per single DW. One key requirement hereto is their reproducible manufacturing by gaining preparative control over domain size and domain wall conductivity (DWC). To date, most works on DWC have focused on exploring the fundamental electrical properties of individual DWs within single-shot experiments, with an emphasis on quantifying the origins of DWC. Very few reports exist when it comes to comparing the DWC properties between two separate DWs, and literally nothing exists where issues of reproducibility in DWC devices have been addressed. To fill this gap while facing the challenge of finding guidelines for achieving predictable DWC performance, we report on a procedure that allows us to reproducibly prepare single hexagonal domains of a predefined diameter into uniaxial ferroelectric lithium niobate single crystals of 200 and 300 μm thickness, respectively. We show that the domain diameter can be controlled with an uncertainty of a few percent. As-grown DWs are then subjected to a standard procedure of current-limited high-voltage DWC enhancement, and they repetitively reach a DWC increase of six orders of magnitude. While all resulting DWs show significantly enhanced DWC values, their individual current–voltage (I–V) characteristics exhibit different shapes, which can be explained by variations in their 3D real structure reflecting local heterogeneities by defects, DW pinning, and surface-near DW inclination.

Funder

Deutsche Forschungsgemeinschaft

Publisher

AIP Publishing

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