High-Quality InAsSb Nanowires Grown by Catalyst-Free Selective-Area Metal–Organic Chemical Vapor Deposition-Reference-Cited by-同舟云学术

High-Quality InAsSb Nanowires Grown by Catalyst-Free Selective-Area Metal–Organic Chemical Vapor Deposition

Published:2015-10-02 Issue:10 Volume:15 Page:6614-6619
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Farrell Alan C.¹,Lee Wook-Jae¹,Senanayake Pradeep¹,Haddad Michael A.¹,Prikhodko Sergey V.¹,Huffaker Diana L.¹

Affiliation:

1. Electrical Engineering Department, ‡Materials Science Department, and §California NanoSystems Institute, University of California at Los Angeles, Los Angeles, California 90095, United States

Funder

Defense Advanced Research Projects Agency

Division of Electrical, Communications and Cyber Systems

Division of Materials Research

Division of Industrial Innovation and Partnerships

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.5b02389

Reference31 articles.

1. Enhanced Sb incorporation in InAsSb nanowires grown by metalorganic vapor phase epitaxy

2. Faceting, composition and crystal phase evolution in III–V antimonide nanowire heterostructures revealed by combining microscopy techniques

3. Suppression of lateral growth in InAs/InAsSb heterostructured nanowires

4. Diameter-Dependent Photocurrent in InAsSb Nanowire Infrared Photodetectors

5. Sb-Induced Phase Control of InAsSb Nanowires Grown by Molecular Beam Epitaxy

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