Epitaxial Growth of Thin Ferroelectric Polymer Films on Graphene Layer for Fully Transparent and Flexible Nonvolatile Memory-Reference-Cited by-同舟云学术

Epitaxial Growth of Thin Ferroelectric Polymer Films on Graphene Layer for Fully Transparent and Flexible Nonvolatile Memory

Published:2015-12-07 Issue:1 Volume:16 Page:334-340
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Kim Kang Lib,Lee Wonho,Hwang Sun Kak,Joo Se Hun¹,Cho Suk Man,Song Giyoung,Cho Sung Hwan,Jeong Beomjin,Hwang Ihn,Ahn Jong-Hyun,Yu Young-Jun²,Shin Tae Joo³,Kwak Sang Kyu¹,Kang Seok Ju¹,Park Cheolmin

Affiliation:

1. School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 689-798, Korea

2. Creative Research Center for Graphene Electronics, Electronics and Telecommunications Research Institute (ETRI), Daejeon 305-700, Korea

3. UNIST Central Research Facilities (UCRF) and School of Natural Science, UNIST 50 UNIST Road, Ulsan 689-798, Korea

Funder

Ulsan National Institute of Science and Technology

National Research Foundation of Korea

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.5b03882

Reference30 articles.

1. Organic Resistive Memory Devices: Performance Enhancement, Integration, and Advanced Architectures

2. Flexible Multilevel Resistive Memory with Controlled Charge Trap B- and N-Doped Carbon Nanotubes

3. Organic Nano-Floating-Gate Memory with Polymer:[6,6]-Phenyl-C61Butyric Acid Methyl Ester Composite Films

4. Nonvolatile organic field-effect transistor memory element with a polymeric gate electret

5. Flexible Non-Volatile Ferroelectric Polymer Memory with Gate-Controlled Multilevel Operation

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