Lithography-Free Fabrication of Core–Shell GaAs Nanowire Tunnel Diodes-Reference-Cited by-同舟云学术

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Lithography-Free Fabrication of Core–Shell GaAs Nanowire Tunnel Diodes

Published:2015-07-22 Issue:8 Volume:15 Page:5408-5413
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Darbandi A.¹,Kavanagh K. L.¹,Watkins S. P.¹

Affiliation:

1. Department of Physics, Simon Fraser University, Burnaby, BC V5A-1S6, Canada

Funder

Natural Sciences and Engineering Research Council of Canada

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.5b01795

Reference19 articles.

1. Coaxial Group III−Nitride Nanowire Photovoltaics

2. Esaki tunnel diodes based on vertical Si-Ge nanowire heterojunctions

3. Tunneling Field-Effect Transistors (TFETs) With Subthreshold Swing (SS) Less Than 60 mV/dec

4. Vertical Nanowire Heterojunction Devices Based on a Clean Si/Ge Interface

5. Strong room-temperature negative transconductance in an axial Si/Ge hetero-nanowire tunneling field-effect transistor

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1. Creation of unexplored tunnel junction by heterogeneous integration of InGaAs nanowires on germanium;Scientific Reports;2022-01-31

2. Geometric effects on carrier collection in core–shell nanowire p–n junctions;Nano Futures;2021-06-01

3. Synthesis and Applications of III–V Nanowires;Chemical Reviews;2019-08-06

4. Electrochemical synthesis of core-shell Co-Ni nanorod arrays with facilely regulated magnetic properties;Physica B: Condensed Matter;2019-08

5. Light-induced negative differential resistance in gate-controlled graphene-silicon photodiode;Applied Physics Letters;2018-05-14

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