Esaki tunnel diodes based on vertical Si-Ge nanowire heterojunctions
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3633347
Reference21 articles.
1. Silicon-based tunneling field-effect transistor with elevated germanium source formed on (110) silicon substrate
2. Tunneling Field-Effect Transistors (TFETs) With Subthreshold Swing (SS) Less Than 60 mV/dec
3. New Phenomenon in Narrow Germaniump−nJunctions
4. Self-assembled ordered arrays of nanoscale germanium Esaki tunnel diodes
5. Collective computational activity in self-assembled arrays of quantum dots: a novel neuromorphic architecture for nanoelectronics
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