Light-induced negative differential resistance in gate-controlled graphene-silicon photodiode-Reference-Cited by-同舟云学术

Light-induced negative differential resistance in gate-controlled graphene-silicon photodiode

Published:2018-05-14 Issue:20 Volume:112 Page:201109
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Liu Wei¹^ORCID,Guo Hongwei¹²,Li Wei¹,Wan Xia¹,Bodepudi Srikrishna Chanakya¹,Shehzad Khurram¹^ORCID,Xu Yang¹

Affiliation:

1. School of Information Science and Electronic Engineering, College of Microelectronics, Zhejiang University, Hangzhou 310027, China

2. Centre for Optical and Electromagnetic Research, State Key Laboratory for Modern Optical Instrumentation, Zhejiang Provincial Key Laboratory for Sensing Technologies, Zhejiang University, Hangzhou 310058, China

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Natural Science Foundation of Zhejiang Province

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5026382

Reference22 articles.

1. The Possibility of Negative Resistance Effects in Semiconductors

2. A Novel Ku-Band RTD-Based Quadrature VCO for Low Power Applications

3. Compact multiple-valued multiplexers using negative differential resistance devices

4. Resonant tunneling device with multiple negative differential resistance: Digital and signal processing applications with reduced circuit complexity

5. Multiple negative differential resistance devices with ultra-high peak-to-valley current ratio for practical multi-valued logic and memory applications

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