Sensitive Silicon Nanowire Ultraviolet B Photodetector Induced by Leakage Mode Resonances-Reference-Cited by-同舟云学术

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Sensitive Silicon Nanowire Ultraviolet B Photodetector Induced by Leakage Mode Resonances

Published:2022-07-07 Issue:28 Volume:14 Page:32341-32349
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Liu Jia-Yin¹,Wang Jun-Jie¹,Lin Di-Hua²,Wang Jiang¹,Fu Can¹,Liang Feng-Xia¹^ORCID,Li Xiang¹,Gu Zi-Peng¹,Wu Di³^ORCID,Luo Lin-Bao¹

Affiliation:

1. School of Microelectronics, Hefei University of Technology, Hefei 230009, China

2. School of Physics, Hefei University of Technology, Hefei 230009, China

3. Key Laboratory of Materials Physics of Ministry of Education, Department of Physics and Engineering, Zhengzhou University, Zhengzhou 450052, China

Funder

Central University Basic Research Fund of China

National Natural Science Foundation of China

Key Laboratory of Advanced Functional Materials and Devices, Hefei University of Technology

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.2c04606

Reference61 articles.

1. Low-Dimensional Nanostructure Ultraviolet Photodetectors

2. Enhanced UV‐C Detection of Perovskite Photodetector Arrays via Inorganic CsPbBr 3 Quantum Dot Down‐Conversion Layer

3. Growth of Ultraflat PbI2 Nanoflakes by Solvent Evaporation Suppression for High-Performance UV Photodetectors

4. High-Performance Solar-Blind Deep Ultraviolet Photodetector Based on Individual Single-Crystalline Zn2GeO4Nanowire

5. Tunable Band-Selective UV-Photodetectors by 3D Self-Assembly of Heterogeneous Nanoparticle Networks

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