Ultrasharp Lateral p–n Junctions in Modulation-Doped Graphene

Author:

Balgley Jesse1,Butler Jackson1ORCID,Biswas Sananda2,Ge Zhehao3,Lagasse Samuel4,Taniguchi Takashi5ORCID,Watanabe Kenji6ORCID,Cothrine Matthew7,Mandrus David G.78ORCID,Velasco Jairo3ORCID,Valentí Roser2ORCID,Henriksen Erik A.1ORCID

Affiliation:

1. Department of Physics, Washington University in St. Louis, 1 Brookings Drive, St. Louis, Missouri 63130, United States

2. Institut für Theoretische Physik, Goethe-Universität Frankfurt, 60438 Frankfurt am Main, Germany

3. Physics Department, UC Santa Cruz, 1156 High Street, Santa Cruz, California 95064, United States

4. Electronics Science and Technology Division, United States Naval Research Laboratory, Washington, D.C. 20375, United States

5. International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan

6. Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan

7. Material Science & Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States

8. Department of Material Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, United States

Funder

Ministry of Education, Culture, Sports, Science and Technology

Army Research Office

U.S. Naval Research Laboratory

Deutsche Forschungsgemeinschaft

Office of Naval Research

Japan Society for the Promotion of Science

Division of Materials Research

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

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