Resonant Tunneling Due to van der Waals Quantum-Well States of Few-Layer WSe2 in WSe2/h-BN/p+-MoS2 Junction-Reference-Cited by-同舟云学术

Resonant Tunneling Due to van der Waals Quantum-Well States of Few-Layer WSe2 in WSe2/h-BN/p+-MoS2 Junction

Published:2021-04-26 Issue:9 Volume:21 Page:3929-3934
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Takeyama Kei¹,Moriya Rai¹^ORCID,Okazaki Shota²,Zhang Yijin¹^ORCID,Masubuchi Satoru¹,Watanabe Kenji³^ORCID,Taniguchi Takashi¹⁴^ORCID,Sasagawa Takao²,Machida Tomoki¹

Affiliation:

1. Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan

2. Laboratory for Materials and Structures, Tokyo Institute of Technology, 4259 Nagatsuta, Yokohama, Kanagawa 226-8503, Japan

3. Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan

4. International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan

Funder

Murata Science Foundation

Core Research for Evolutional Science and Technology

Precursory Research for Embryonic Science and Technology

Japan Society for the Promotion of Science

Moritani Scholarship Foundation

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.1c00555

Reference26 articles.

1. Photonics and optoelectronics of 2D semiconductor transition metal dichalcogenides

2. Van der Waals heterostructures and devices

3. Bandgap engineering of two-dimensional semiconductor materials

4. Two-dimensional material nanophotonics

5. Exciton physics and device application of two-dimensional transition metal dichalcogenide semiconductors

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